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By Chuan Seng Tan, Kuan-Neng Chen, Visit Amazon's Steven J. Koester Page, search results, Learn about Author Central, Steven J. Koester,

Three-dimensional (3D) integration is pointed out as a potential street for non-stop functionality progress in built-in circuits (IC) because the traditional scaling technique is confronted with remarkable demanding situations in primary and financial limits. Wafer point 3D IC can take a number of kinds, they usually frequently contain a stack of a number of thinned IC layers which are vertically bonded and interconnected via via silicon through TSV.

There is an extended string of advantages that you can actually derive from 3D IC implementation resembling shape issue, density multiplication, enhanced hold up and tool, superior bandwidth, and heterogeneous integration. This ebook provides contributions by means of key researchers during this box, protecting motivations, know-how systems, purposes, and different layout matters.

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Extra resources for 3D Integration for VLSI Systems

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Cohen, G. , Nitta, S. , et al. 13μm SOI CMOS devices and circuits transferred for three-dimensional integrated circuit fabrication, in Technical Digest of the International Electron Devices Meeting, pp. 943-945. , Nelson, D. , et al. (2006) Die stacking microarchitecture, in Proceedings of the 39th Annual IEEE/ACM International Symposium on Microarchitecture, Association for Computing Machinery, New York, pp. 469-479. U. -J. -H. Ahn, H. -H. Cha, J. Ahn, D. H. Jim, J. W. Lee, et al. (2009) 8Gb 3D DDR3 DRAM using through-silicon-via technology , in IEEE International Solid-State Circuits Conference: Digest of Technical Papers, 2009, pp.

Finan, P. Iyer, A. Singh, T. Jacob, S. Jain, S. Venkataraman, Y. Hoskote, N. 28TFLOPS networkon-chip in 65 nm CMOS,” IEEE International Solid State Circuits Conference (ISSCC), San Francisco, CA, Feb. 11-15, 2007. P. Emma, “How is bandwidth used in computers? Why bandwidth is the next major hurdle in computer systems evolution and what technologies will emerge to address the bandwidth problem,” in High-Performance EnergyEfficient Microprocessor Design, Springer, US, 2006, pp. 235-287. P. Emma and E.

1371-1374, 2003. 31. K. N. Chen, C. S. Tan, A. Fan, and R. Reif, “Morphology and bond strength of copper wafer bonding,” Electrochemical and Solid-State Letters, 7(1), pp G14-G16, 2004. 32. C. S. Tan, K. N. Chen, A. Fan, R. Reif, and A. Chandrakasan, “Silicon layer stacking enabled by wafer bonding,” MRS Symposium Proceedings, Vol. 970, pp. 193204, 2007. 33. A. Jourdai, S. Stoukatch, P. De Moor, W. Ruythooren, S. Pargfrieder, B. Swinnen, and E. Beyne, “Simultaneous Cu-Cu and compliant dielectric bonding for 3D stacking of ICs,” Proc.

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3D Integration for VLSI Systems by Chuan Seng Tan, Kuan-Neng Chen, Visit Amazon's Steven J. Koester Page, search results, Learn about Author Central, Steven J. Koester,


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